NTE157 Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39)
Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line-operated equipment such as audio output amplifiers, low-current, high-voltage converters, and AC line relays. Features: D Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA D Current-Gain - Bandwidth Product: fT = 10MHz (Min) @ IC = 50mA Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction to case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25C/W Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current VCEO(sus) IC = 100mA (Inductive), L = 50mH V(BR)CEO IC = 1mA, IB = 0 ICEO ICEX ICBO Emitter Cutoff Current IEBO VCE = 200V, IB = 0 VCE = 300V, VEB(off) = 1.5V VCE = 300V, VEB(off) = 1.5V, TC = +100C VCB = 325V, IE = 0 VEB = 6V, IC = 0 300 300 - - - - - - - - - - - - - - 0.1 0.1 1.0 10 10 V V mA mA mA A A Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified)
Parameter ON Characteristics (Note 1) DC Current Gain hFE IC = 50mA, VCE = 10V IC = 100mA, VCE = 10V IC = 250mA, VCE = 10V IC = 500mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 10mA IC = 250mA, IB = 25mA IC = 500mA, IB = 100mA Base-Emitter Voltage Dynamic Characteristics Current-Gain-Bandwidth Product Output Capacitance Small-Signal Current Gain fT Cob hfe IC = 50mA, VCE = 10V, f = 10MHz, Note 2 VCB = 10V, IE = 0, f = 100kHz IC = 100mA, VCE = 10V, f = 1kHz 10 - 20 - - - - 25 - MHz pF VBE IC = 100mA, VCE = 10V 25 30 15 5 - - - - - - - - - - - - - 250 - - 1 2.5 10 1 V V Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity. .330 (8.38) Max .175 (4.45) Max
.450 (11.4) Max
.118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B
.090 (2.28) .130 (3.3) Max
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